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Ann Clin Neurophysiol > Volume 2(2); 2000 > Article
Ann Clin Neurophysiol. 2000; 2(2): 168-171.
Electrophysiological Approach to Memory and Learning
Il-Keun Lee
Copyright © 2000 The Korean Society of Clinical Neurophysiology
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/4.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Memory and learning are major components of higher cognitive functions of human mind which cannot be assessed simply by conventional clinical neurological evaluation methods. Objective and quantitative evaluations of memory and learning are needed in many clinical settings and basic research designs. Among evoked potentials, there are several slow potentials called endogenous evoked potentials such as Contingent Negative Variation(CNV) and P300(or P3) which are recorded later than the recording of exogenous evoked potentials. Whereas exogenous evoked potentials are generated by the automatic processes of the nervous system, endogenous evoked potentials are generated by the complex controlled processes of nervous system and mind. Knowing the detailed mechanism and important factors of those endogenous evoked potentials, we can understand the internal mechanisms of memory and learning and apply the knowledge for further elucidation of memory and learning procedures.
Key words: Memory, Contingent negative variation(CNV), P300
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